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The structural configuration of GaSe/HfS2 heterostructure with a side view (left) and top view (right).

New paper has been published in ACS Applied Materials & Interfaces

In this paper, Carmine Autieri and Rajibul Islam from MagTop, collaborated with researchers from Beihang University, Hefei, China and  Tata Institute of Fundamental Research, Mumbai, India. The authors worked on laser irradiation effect on the p‑GaSe/n-HfS2 PN-heterojunction for high-performance phototransistors.

ACS Appl. Mater. Inter. 14, 35927 (2022)

22-07-2022
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